MPSA55

MPSA55 / MMBTA55 / PZTA55 MPSA55 MMBTA55 C PZTA55 C E C B TO-92 E SOT-23 Mark: 2H B SOT-223 B C E PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. See MPSA56 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 60 60 4.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA55 625 5.0 83.3 200 Max *MMBTA55 350 2.8 357 **PZTA55 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ã 1997 Fairchild Semiconductor Corporation MPSA55/MMBTA55/PZTA55, Rev A MPSA55 / MMBTA55 / PZTA55 ...