Document
EEPROMs
MN61113, MN61113S
2K-Bit EEPROMs
Overview
The MN61113 and MN61113S are 2048-bit, bit sequential EEPROMs with built-in address counters. They sequentially increment the address with the clock input to produce serial output. They include built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, they include a block write function for writing up to 32 bits at a time. This function makes it possible to rewrite the contents of all 2048 bits within 1 second (typ.).
Pin Assignment
MN61113 MN61113S DIP008-P-0300A SOP008-P-0225
DATA CE VCC GND
1 2 3 4
8 7 6 5
OE RST CLK PGM
Features
2048 words × 1 bit organization Built-in reset function Tristate output Low power consumption • 3 volt read: 1.5 mW (max.) • 3 volt program: 6 mW (max.) • 3 volt standby: 60 µW (max.) Single 3 volt power supply (charge pump circuit built in) Self timer for use in automatically erasing and writing data Built-in data polling function Write cycles: 105 times Data storage interval: 10 years Pull-up resistor on CE pin. Pull-down resistors on PGM, CLK, and RST pins (TOP VIEW)
Applications
Personal wireless equipment, cordless telephones, storage for recognition and adjustment data for terminals, etc.
1
MN61113, MN61113S
Block Diagram
EEPROMs
Data latch pump
Clock generator
8-bit counter
CLK
6
Row decoder
64 × 16 cell matrix
3
VCC GND
4
RST
7
CE OE PGM
2 8 5 Control logic
Column decoder
Column gate
VPP generator Timer
Data I/O buffer
2
DATA
1
EEPROMs
Pin Descriptions
Pin No. 1 2 3 4 5 6 7 8 Symbol DATA CE VCC GND PGM CLK RST OE Pin Name Data I/O Chip enable Power supply voltage Ground Program Clock input Reset input Output enable
MN61113, MN61113S
Electrical Characteristics
VCC=2.6 to 3.5V, Ta=–10˚C to +60˚C
3 Volt Operation
Parameter Power supply voltage "L" level input leakage current "H" level input leakage current Output leakage current "L" level input voltage "H" level input voltage VCC power supply current (during operation) VCC power supply current (during standby) "L" level output voltage "H" level output voltage
Symbol VCC ILIL ILIH ILO VIL VIH ICC
Test Conditions Read mode Program mode CE pin Other pins PGM, CLK, and RST pins Other pins
min 2.6 3.0 –50 –10 — –10 — – 0.1 0.8 VCC
max 3.5 3.5 — 10 –20 10 10 0.2 VCC VCC +0.3 500 2000 20
Unit V µA µA µA V V
Read mode CLK;f=250kHz Program mode
— — —
µA
ISB
CE = VCC+ 0.3 V; RST and PGM pins at VCC; CLK pin open µA
VOL VOH
IOL=400µA IOH=10µA
— VCC – 0.3
0.3 —
V V
3
MN61113, MN61113S
Function Descriptions Operating Modes
Pin Symbol (Pin No.) Operating Mode
EEPROMs
CE (2)
OE (8) VIL × VIH
PGM (5) × ×
DATA (1) DOUT High-impedance DIN
Read Standby Program
VIL VIH VIL
4
EEPROMs
Package Dimensions (Unit:mm)
MN61113 DIP008-P-0300A
MN61113, MN61113S
8
5
3.30±0.20 6.40±0.20
7.62±0.20
1 9.60±0.40
4
4.80 max.
3.45±0.30
2.54
0.50±0.10 0.70±0.10
1.30±0.10
0.70 min.
SEATING PLANE
MN61113S
SOP008-P-0225
SEE DETAIL F 1.90 DETAIL F 1.10±0.20 0.30 SEATING PLANE
1.50±0.20 8 5
6.50±0.30
4.30±0.20
0.60
1 5.00±0.20
4
1.27 SEATING PLANE 0.40±0.10
0° to 1
5°
0.25 –0.05
+0.20
5
.