SS9015

SS9015 SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -45 -5 -100 450 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) Cob fT NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Test Condition IC = -100µA, IE =0 IC = -1mA, IB =0 IE = -100µA, IC =0 VCB = -50V, IE =0 VEB = -5V, IC =0 VCE = -5V, IC = -1mA IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCB = -10V, IE =0 f=1MHz VCE = -5V, IC = -10mA VCE = -5V, IC = -0.2mA f=1KHz, RS=1KΩ 100 -0.6 4.5 190 0.7 10 60 Min. -50 -45 -5 -50 -50 1000 -0.7 -1.0 -0.75 7.0 V V pF MHz dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE A 60 ~ 150 B 100 ~ 300 C 200 ~ 600 D 400 ~ 1000 ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 SS9015 ...