CA3127
August 1996
High Frequency NPN Transistor Array
Description
The CA3127 consists of five general purpose silicon N...
CA3127
August 1996
High Frequency
NPN Transistor Array
Description
The CA3127 consists of five general purpose silicon
NPN transistors on a common monolithic substrate. Each of the completely isolated
transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual
transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five
transistors.
Features
Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz Five Independent
Transistors on a Common Substrate
Applications
VHF Amplifiers Multifunction Combinations - RF/Mixer/Oscillator Sense Amplifiers Synchronous Detectors VHF Mixers
Ordering Information
PART NUMBER (BRAND) CA3127E TEMP. RANGE (oC) -55 to 125 -55 to 125 PKG. NO. E16.3 M16.15
PACKAGE 16 Ld PDIP 16 Ld SOIC
IF Converter IF Amplifiers Synthesizers Cascade Amplifiers
CA3127M (3127) CA3127M96 (3127)
-55 to 125
16 Ld SOIC Tape and Reel M16.15
Pinout
CA3127 (PDIP, SOIC) TOP VIEW
1 2 Q2 3 4
Q1
16 15 14 13 Q5 12 11
SUBSTRATE
5 6 Q3 7 8 Q4
10 9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-...