MRF1001A

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.5 dB (typ) @ 300 MHz, 14v, 90mA 1. Emitter 2. Base 3. Collector |S21| = 11 dB (typ) @ 300 MHz, 14v, 90mA TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 30 3.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts mW/ ºC MSC1311.PDF 10-25-99 MRF1001A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVEBO BVCBO ICBO VCE(sat) Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc) Emitter-Base Breakdown Voltage (IC= 0.1 mAdc) Collector-Base Breakdown Voltage (IC=1.0 mAdc) Collector-Base (VCB = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 50mA, IC/IB = 10) 20 3.5 30 Value Typ. 50 100 Max. Unit Vdc Vdc Vdc µA mV (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 300 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 90 mAdc, VCE = 14 Vdc, f = 300...