MRF10031

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10031/D Microwave Long Pulse Power Transistor Designed for 960 – 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Hermetically Sealed Industry Standard Package Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation MRF10031 30 W (PEAK) 960 – 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage (1) Emitter–Base Voltage Collector Current — Continuous (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 3.0 110 0.625 – 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 1.6 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrare...