MRF1035MB

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1035MB/D Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCES VCBO VEBO IC PD Tstg Value 60 60 4.0 2.0 35 200 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C MRF1035MB 35 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 5.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO ...