MRF10350

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10350/D The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Hermetically Sealed Package Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input and Output Matching Characterized using Mode–S Pulse Format MRF10350 350 W (PEAK) 1025–1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 31 1590 9.1 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.11 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case ...