HAT2096H

HAT2096H Silicon N Channel Power MOS FET Power Switching ADE-208-1431B (Z) 3rd. Edition Aug. 2002 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2096H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 40 160 40 20 150 –55 to + 150 Unit V V A A A W °C °C Rev.2, Aug. 2002, page 2 of 10 HAT2096H Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 — — 1.0 — — 30 — — — — — — — — — — — — Typ — — — — — 4.2 7.0 50 2200 600 330 40 7 8 20 49 62 15 0.85 60 Max — — ± 10 1 2.5 5.3 10 — — — — — — — — — — — 1.11 — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 10 V ID = 20 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 40 A VGS = 10 V, ID = 20 A VDD ≅ 10 V RL = 0.5 Ω Rg = 4.7 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/ dt = 50 A/ µs Note3 Note3 Note3 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to sou...