K4T1G044QM

1Gb M-die DDR2 SDRAM DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.1 January 2005 Page 1 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM 0. Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-533 4-4-4 K4T1G044QM-ZCD5 K4T1G084QM-ZCD5 K4T1G164QM-ZCD5 DDR2-400 3-3-3 K4T1G044QM-ZCCC K4T1G084QM-ZCCC K4T1G164QM-ZCCC DDR2 SDRAM Package Lead-Free Lead-Free Lead-Free Note : Speed bin is in order of CL-tRCD-tRP 1.Key Features Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns JEDEC standard 1.8V ± 0.1V Power Supply VDDQ = 1.8V ± 0.1V 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin. 8 Banks Posted CAS Programmable CAS Latency: 3, 4, 5 Programmable Additive Latency: 0, 1 , 2 , 3 and 4 Write Latency(WL) = Read Latency(RL) -1 Burst Length: 4 , 8(Interleave/nibble sequential) Programmable Sequential / Interleave Burst Mode Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) Off-Chip Driver(OCD) Impedance Adjustment On Die Termination Average Refresh Period 7.8us at lower than TCASE 85°C, ...