STD20NF06

STD20NF06 N-CHANNEL 60V - 0.032 Ω - 24A DPAK STripFET™ II POWER MOSFET TYPE STD20NF06 ■ ■ ■ ■ VDSS 60 V RDS(on) < 0.040 Ω ID 24 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DPAK TO-252 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH SWITCHING APPLICATIONS INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STD20NF06 MARKING D20NF06 PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 20 24 17 96 60 0.4 10 300 -55 to 175 (1) ISD ≤24A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID =10 A, VDD = 45V Unit V V V A A A W W/°C V/ns mJ °C () Pulse width limited by safe operating area. June 2004 Rev.3.0.6 1/10 ST...