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STD2N50

ST Microelectronics

N-CHANNEL MOSFET

STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 s s s s s V DSS 500 V R DS( on) < 5.5 Ω ID 2A ...


ST Microelectronics

STD2N50

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STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 s s s s s V DSS 500 V R DS( on) < 5.5 Ω ID 2A s s TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 20 2 1.25 8 45 0.36 -65 to 150 150 Unit V V V A A A W W/o C o o C C () Pulse width limited by safe operating area December 1996 1/10 STD2N50 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.78 100 1.5 275 o o C/W C/W o C/W o C AVAL...




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