STC918K

Semiconductor STC918K NPN Silicon Transistor Features High current transition frequency fT=9.0 GHz(Typ.) @VCE=6V, IC=15mA Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA Ordering Information Type NO. STC918K Marking F4 Package Code SOT-623F Outline Dimensions unit : mm PIN Connections 1. Base 2. Emitter 3. Collector KST-4007-000 1 STC918K Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 10 1.5 50 100 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance TC=25°C Symbol BVCBO*1 BVCEO*1 ICBO*1 IEBO*1 hFE*1 fT Cob Test Condition IC=100µA, IE=0 IC=100uA, IB=0 VCB=10V, IE=0 VEB=1V, IC=0 VCE=6V, IC=5mA VCE=6V, IE=15mA VCB=1V, IE=0, f=1MHz VCB=5V, IE=0, f=1MHz Min. Typ. Max. 20 10 50 9 0.4 0.3 0.1 0.1 - Unit V V µA µA GHz pF Performance Characteristics Characteristic Insertion Gain Maximum Unilateral Gain Maximum Stable Gain Maximum Available Gain Noise Figure(Minimum) Noise Resistance Associated Gain at Minimum NF...