®
STB60NF03L
N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET™ POWER MOSFET
PRELIMINARY DATA
T YPE STB60NF03L
s s
V DSS 3...
®
STB60NF03L
N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET™ POWER MOSFET
PRELIMINARY DATA
T YPE STB60NF03L
s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s s
TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE LOGIC LEVEL GATE DRIVE
3 1
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS
D2PAK TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot E AS ( 1 ) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o o o
Value 30 30 ± 20 60 42 240 100 0.67 650 -65 to 175 175
( 1) starting Tj = 25 oC, ID = 30A , VDD = 20V
Un it V V V A A A W W /o C mJ
o o
C C 1/6
() Pulse width limited by safe operating area
September 1999
STB60NF03L
THERMAL DATA
R thj -case R thj...