STB60NF03L

® STB60NF03L N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE LOGIC LEVEL GATE DRIVE 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot E AS ( 1 ) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 60 42 240 100 0.67 650 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 30A , VDD = 20V Un it V V V A A A W W /o C mJ o o C C 1/6 () Pulse width limited by safe operating area September 1999 STB60NF03L THERMAL DATA R thj -case R thj...