MC14572UB
Hex Gate
The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode d...
MC14572UB
Hex Gate
The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.
Features
Diode Protection on All Inputs Single Supply Operation Supply Voltage Range = 3.0 Vdc to 18 Vdc NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter NAND Input Pin Adjacent to VDD Pin to Simplify Use As An
Inverter
NOR Output Pin Adjacent to Inverter Input Pin For OR Application NAND Output Pin Adjacent to Inverter Input Pin For AND
Application
Capable of Driving Two Low−Power TTL Loads or One
Low−Power
Schottky TTL Load over the Rated Temperature Range
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable*
This Device is Pb−Free and is RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to VSS)
Parameter
Symbol
Value
Unit
DC Supply Voltage Range
VDD −0.5 to +18.0 V
Input or Output Voltage Range (DC or Transient)
Vin, Vout − 0.5 to VDD + 0.5
V
Input or Output Current (DC or Transient) Iin, Iout ±10 mA per Pin
Power Dissipation, per Package (Note 1)
PD
500 mW
Ambient Temperature Range
TA −55 to +125 °C
Storage Temperature Range
Tstg − 65 to +150 °C
Lead Temperature (8−Second Soldering)
TL
26...