MPSW55

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW55/D One Watt Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW55 MPSW56* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW55 –60 –60 –4.0 –500 1.0 8.0 2.5 20 – 55 to +150 MPSW56 –80 –80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –40 Vdc, IB = 0) (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO — — — –0.1 –0.1 –0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES — — –0.5 –0.5 µAdc –60 –80 –4.0 — — — Vdc µAdc Vdc v 300 ms, Duty Cycle v 2.0%. Preferred devi...