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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSW63/D
One Watt Darlington Transistors
PNP Silicon
COLLECTOR 3
MPSW63 MPSW64 *
*Motorola Preferred Device
BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 –30 –30 –10 –500 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C
1
2
3
CASE 29–05, STYLE 1 TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) V(BR)CES ICBO IEBO –30 — — — –100 –100 Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
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MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = –10 mAdc, VCE = –5.0 Vdc) hFE MPSW63 MPSW64 MPSW63 MPSW64 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 — — — — — — –1.5 –2.0 Vdc Vdc —
(IC = –100 mAdc, VCE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc) Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2) (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| • ftest. fT 125 — MHz
v 300 ms, Duty Cycle v 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
200 h FE, DC CURRENT GAIN (X1.0 k) TJ = 125°C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 –0.3
25°C VCE = –2.0 V –5.0 V –55°C
–10 V
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–70
–100
–200
–300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) –2.0 TJ = 25°C –1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = –5.0 V VCE(sat) @ IC/IB = 1000 IC/IB = 100 –0.4 0 –0.3 –0.5 –1.0 –2.0 TJ = 25°C –1.8 –1.6 –50 mA –100 mA –175 mA –1.4 –1.2 –1.0 –0.8 –0.6 –0.1 –0.3 –300 mA
–1.2
–0.8
IC = –10 mA –1.0 –3.0 –10 –30 –100 –300 –1 k –3 k –10 k
–3.0 –5.0
–10
–30 –50 –100
–300
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW63 MPSW64
R qV , TEMPERATURE COEFFICIENT (mV/ °C) +5.0 +4.0 +3.0 +2.0 +1.0 0 –1.0 –2.0 –3.0 –4.0 RqVB FOR VBE –5.0 –0.3 –0.5 –1.0 –2.0 *RqVC FOR VCE(sat) –50°C TO +25°C +25°C TO +125°C –5.0 –10 –20 –50 –100 –300 +25°C TO +125°C –50°C TO +25°C *APPLIES FOR IC/IB ≤ hFE/100 f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 600 400 300 200 TJ = 25°C VCE = –20 V
100 60 40 30 20 –0.3 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –300 –10 V –5.0 V
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
Figure 5. Current–Gain — Bandwidth Product
20 15 C, CAPACITANCE (pF) 10 7.0 5.0
Cobo IC , COLLECTOR CURRENT (mA)
–2 k
Cibo
–1 k
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 mS
100 ms
–500 1.0 s TA = 25°C –200 DUTY CYCLE ≤ 10% –100 –1.5 –2.0 TC = 25°C
TJ = 25°C f = 1.0 MHz
3.0 2.0 –0.1 –0.2
–0.5
–1.0
–2.0
–5.0
–10
–20 –30
–5.0
–10
–20
–30
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPSW63 MPSW64
PACKAGE DIMENSIONS
A
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 –––
K
DIM A B C D F G H J K L N P R V
X X G H V
1 2 3
D J SECTION X–X
N C
N
CASE 029–05 (TO–226AE) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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