MTP3N55

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 TYPE: MTP3N55 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 550 550 3.0 10 ±20 75 -65 to +150 275 Vdc Vdc Adc Adc Vdc Watts Adc °C °C ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = .25mA Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA ID = 1.0mA, TJ = 100°C Gate – Body Leakage IGSS VGS = 20V Current Zero Gate Voltage IDSS VDS = 550V Drain Current VDS = 440V, T J = 125°C On State Drain Current ID(on) Drain Source On Resistance Forward Transconductance Drain-Source OnVoltage Drain Source OnVoltage Input Capacitance Output Capacitance Reverse Transfer Capacitance rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VDS = 25V, f = 1 MHz ID = 1.5A, VGS = 10V, ID = 1.5A, VDS = 15V, ID = 3.0A VGS = 10V ID = 1.5A, VGS = 10V TJ = 100°C Min 550 2.0 1.5 Typ Max Unit Vdc Vdc nA mA mA Adc 4.5 4.0 100 0.2 1.0 2.5 1.5 9.0 7.5 Ohms mhos Vdc Vdc Vdc 1000 pF 300 80 pF pF Page 1 of 2 TYPE:MTP3N55 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time Forward Tu...