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TC4049 Dataheets PDF



Part Number TC4049
Manufacturers Toshiba
Logo Toshiba
Description HEX BUFFER/CONVERTER
Datasheet TC4049 DatasheetTC4049 Datasheet (PDF)

TC4049,4050BP/BF/BFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4049BP,TC4049BF,TC4049BFN, TC4050BP,TC4050BF,TC4050BFN TC4049B Hex Buffer/Converter (inverting type) TC4050B Hex Buffer/Converter (non-inverting type) TC4049B, TC4050B contain six circuits of buffers. TC4049B is inverter type and TC4050B is non-inverter type. Since one TTL or DTL can be directly driven having large output current, these are useful for interfacing from CMOS to TTL or DTL. As voltage up to VSS + 18 .

  TC4049   TC4049



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TC4049,4050BP/BF/BFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4049BP,TC4049BF,TC4049BFN, TC4050BP,TC4050BF,TC4050BFN TC4049B Hex Buffer/Converter (inverting type) TC4050B Hex Buffer/Converter (non-inverting type) TC4049B, TC4050B contain six circuits of buffers. TC4049B is inverter type and TC4050B is non-inverter type. Since one TTL or DTL can be directly driven having large output current, these are useful for interfacing from CMOS to TTL or DTL. As voltage up to VSS + 18 volts can be applied to the input regardless of VDD, these can be also used as the level converter IC’s which converts CMOS logical circuits of 15 volts or 10 volts system to CMOS/TTL logical circuits of 5 volts system. Ideal switching characteristic has been obtained by the circuit diagram of three stage inverters for TC4049B and two stage inverters for TC4050B. Note: xxxFN (JEDEC SOP) is not available in Japan. TC4049BP, TC4050BP TC4049BF, TC4050BF TC4049BFN, TC4050BFN Weight DIP16-P-300-2.54A SOP16-P-300-1.27A SOL16-P-150-1.27 : 1.00 g (typ.) : 0.18 g (typ.) : 0.13 g (typ.) 1 2007-10-01 Pin Assignment TC4049B TC4049,4050BP/BF/BFN TC4050B Circuit Diagram 1/6 TC4049B 1/6 TC4050B Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit DC supply voltage Input voltage Output voltage DC input current Power dissipation Operating temperature range Storage temperature range VDD VIN VOUT IIN PD Topr Tstg VSS − 0.5~VSS + 20 VSS − 0.5~VSS + 20 VSS − 0.5~VDD + 0.5 ±10 300 (DIP)/180 (SOIC) −40~85 −65~150 V V V mA mW °C °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-10-01 TC4049,4050BP/BF/BFN Operating Ranges (VSS = 0 V) (Note) Characteristics Symbol Test Condition Min Typ. Max Unit DC supply voltage Input voltage VDD VIN ⎯ 3 ⎯ 18 V ⎯ 0 ⎯ 18 V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VDD or VSS. Static Electrical Characteristics (VSS = 0 V) Characteristics High-level output voltage Low-level output voltage Output high current Output low current Input high voltage Input low voltage Input current “H” level “L” level Quiescent supply current Symbol VOH VOL IOH IOL VIH VIL IIH IIL IDD Test Condition VDD (V) ⎪IOUT⎪< 1 μA VIN = VSS, VDD 5 .



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