MFR9180

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 17 dB Efficiency — 26% Adjacent Channel Power – 750 kHz: –45.0 dBc @ 30 kHz BW 1.98 MHz: –60.0 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters MRF9180 MRF9180S 880 MHz, 170 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 375D–04, STYLE 1 NI–1230 MRF9180 CASE 375E–03, STYLE 1 NI–1230S MRF9180S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 388 2.22 –65 to +200 200 Unit Vdc Vdc Wa...