H649A

Shantou Huashan Electronic Devices Co.,Ltd. P NP S I L I C O N T RAN S I S T O R H649A ¨€ ¨€ LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS£¨ Tstg¡ª T j¡ ª PC¡ª PC¡ª VCBO¡ª VCEO¡ ª VEBO¡ª IC¡ª Storage Temperature¡Junction Temperature¡-¡ Collector Dissipation£¨ Collector Dissipation£¨ Tc=25¡æ£© TA=25¡æ £©¡¡¡¡¡¡¡¡- ¡¡¡¡¡- Ta=25¡æ£© -55~150¡æ 150¡æ 20W 1W -180V -160V -5V -1.5A 1¨D Emitter£¬ E 2¨D Collector£¬ C 3¨D Base£¬ B TO-126ML Collector-Base Voltage¡-¡ -¡ -¡ -¡ Collector-Emitter Voltage¡-¡ -¡ Emitter-Base Voltage¡-¡ Collector Current£¨ DC£©¡- ¨€ Electrical Characteristics£¨ Symbol Ta=25¡æ£© Min Typ Max Unit Test Conditions Parameter HFE£¨ HFE£¨ 1£© 2£© DC Current Gain 60 30 200 VCE= -5V, IC= -150mA VCE= -5V, IC= -500mA VCE(sat) BVCBO BVCEO BVEBO ICBO fT Cob Collector- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector-Base Cutoff Current -1 -180 -160 -5 -10 ¦Ì 140 27 V V V V A IC= -500mA, IB= -50mA IC= -1mA, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -160V, IE=0 VCE=-5V, IC=-150mA VCB=-10V,IE=0,f=1MHz Current Gain- Bandwidth Product Output Capacitance MHz pF ¨€ hFE Classification B 60¡ª 120 100¡ª C 200 ...