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TC58NS512DC
512 MBit CMOS NAND EPROM
Description
TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION 2 TM ) The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device h...
Toshiba
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