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SSP6N80A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) 1 2 3 SSP6N80A BVDSS = 800 V RDS(on) = 2.0 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb...
Fairchild
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SSP6N80A
Advanced Power MOSFET
- Fairchild
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