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MX086-4

Microsemi

Battery Bypass Charge Diode

www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX086-4 60 Volts 5...


Microsemi

MX086-4

File Download Download MX086-4 Datasheet


Description
www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX086-4 60 Volts 50 Amps 2 µs BATTERY BYPASS CHARGE DIODE SYMBOL VRRM IF(ave) IFSM Tj Tstg θJC MIN 2.5 2.75 3.2 Features Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Designed for battery cell bypass Passivated mesa structure for very low leakage currents 4 die stacked in one package Hermetically sealed, ceramic surface mount power package Maximum Ratings @ 25°C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case: DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs, d/c≤ 2% SYMBOL IR VF1 VF2 VF3 CONDITIONS VR= 60 Vdc, Tc= 25°C IF= 100 mA, Tc= 25°C IF= 5 A, Tc= 25°C IF = 10A, Tc= 25°C MAX. 60 50 300 -20 to +275 -65 to +175 0.9 TYP. 1 MAX 10 3.0 3.73 3.86 UNIT Volts Amps Amps °C °C °C/W UNIT µA V V Mechanical Outline www.DataSheet4U.com ...




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