N- and P-Channel 30-V (D-S) MOSFET
Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.040 @ ...
Description
Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V
ID (A)
"6 "4.8 "6 "4.4
P-Channel
–30
0.040 @ VGS = –10 V 0.070 @ VGS = –4.5 V
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
30 "20 "6 "4.7 "30 2 2.4
P-Channel
–30 "20 "6 "4.7 "30 –2
Unit
V
A
W 1.5 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70633 S-56944—Rev. E, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
N- or P- Channel
52
Unit
_C/W
2-1
Si4558DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z Zero Gate G Voltage V l Drain D i Current C IDSS VDS = –30 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = –24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V
b O S On-State Drain D i Current C
Symbol
Test Condition
Min...
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