Document
Am29DL640H
Data Sheet
For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to the S29JL064H Datasheet for specifications and ordering information.
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions.
Publication Number 27082 Revision A
Amendment 6 Issue Date February 9, 2005
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For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to the S29JL064H Datasheet for specifications and ordering information.
Am29DL640H
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Flexible Bank architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions.
TM
■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ Minimum 1 million erase cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation ■ Supports Common Flash Memory Interface (CFI) ■ Erase Suspend/Erase Resume — Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences
■ Boot Sectors — Top and bottom bo.