2N3742

2N3742 CASE 79-02, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO ic PD Pd TJ- Tstg Value 300 300 7.0 50 1.0 5.71 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, 'Junction to Case Thermal Resistance, Junction to Ambient Symbol R 0JC R &JA Max 35 175 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltaged) (IC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 100/iAdc, El = 0) Emitter-Base Breakdown Voltage (IE = 100 ftAdc, Ic = 0) Collector Cutoff Current (Vcb = 200 Vdc, El = 0) (Vcb = 200 Vdc, l£ = 0, Ta = 100°C) Emitter Cutoff Current (VE b = 6.0 Vdc, Ic = 0) ON CHARACTERISTICS^) DC Current Gain dC = 3.0 mAdc, V C E = 10 Vdc) (IC = 10 mAdc, V C E = 10 Vdc) flC = 30 mAdc, V C e = 10 Vdc) flC = 50 mAdc, Vce = 20 Vdc) Collector-Emitter Saturation Voltage dC = 10 mAdc, Ib = 1.0 mAdc) dC = 30 mAdc, Ib = 3.0 mAdc) Base-Emitter Saturation Voltage dC = 10 mAdc, Ib = 1.0 mAdc) dC = 30 mAdc, Ib = 3.0 mAdc) SMALL-SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product(3) dC = 10 m...