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STTH3L06 Dataheets PDF



Part Number STTH3L06
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description ultrafast high-voltage rectifier
Datasheet STTH3L06 DatasheetSTTH3L06 Datasheet (PDF)

STTH3L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data A A K SMB K A K SMC DO-201AD Features  Ultrafast switching  Low forward voltage drop  Low thermal resistance  Low leakage current (platinum doping) Description This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections. It is also intended for use as a freewheeling diode in power supplies and other power switching applic.

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STTH3L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data A A K SMB K A K SMC DO-201AD Features  Ultrafast switching  Low forward voltage drop  Low thermal resistance  Low leakage current (platinum doping) Description This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections. It is also intended for use as a freewheeling diode in power supplies and other power switching applications. Table 1: Device summary Symbol Value IF(AV) VRRM IR (max.) Tj (max.) VF (typ.) trr (typ.) 3A 600 V 100 µA 175 °C 0.85 V 60 ns Table 2: Order codes Part number Marking STTH3L06 STTH3L06 STTH3L06U 3L6U STTH3L06S S06 April 2016 DocID8322 Rev 4 This is information on a product in full production. 1/11 www.st.com Characteristics STTH3L06 1 Characteristics Table 3: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current δ = DO-201AD/SMC TI = 100 °C 0.5, square wave SMB TI = 80 °C 3 A IFSM Surge non repetitive forward current, tp = 10 ms sinusoidal DO-201AD SMB/SMC 70 60 A A Tstg Storage temperature range Tj Maximum operating junction temperature -65 to +175 °C +175 °C Symbol Rth(j-l) Rth(j-a) Table 4: Thermal parameters Parameter DO-201AD L = 10 mm Junction to lead SMB SMC Junction to ambient DO-201AD L = 10 mm Maximum 20 25 20 75 Unit °C/W Symbol IR VF Table 5: Static electrical characteristics Parameter Test conditions Min. Typ. Max. Unit Reverse leakage current Forward voltage drop Tj = 25 °C - VR = VRRM Tj = 150 °C - 3 µA 15 100 Tj = 25 °C IF = 3 A Tj = 150 °C - 1.3 V - 0.85 1.05 To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.055 IF2(RMS) Table 6: Dynamic characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A; dIF/dt = -50 A/μs; VR = 30 V - 60 85 ns tfr Forward recovery time IF = 3 A; dIF/dt = 100 A/μs; VFR = 1.1 x VFmax - 100 Forward Tj = 25 °C VFP recovery voltage IF = 3 A; dlF/dt = 100 A/µs - 7.5 V 2/11 DocID8322 Rev 4 STTH3L06 1.1 Characteristics (curves) Characteristics Figure 1: Conduction losses versus average current P(W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 δ = 0.05 δ = 0.1 δ = 0.2 IF(AV)(A) 1.0 1.5 2.0 2.5 δ = 0.5 δ=1 T δ= tp/T tp 3.0 3.5 4.0 Figure 2: Forward voltage drop versus forward current 1.E+02 IFM(A) 1.E+01 Tj = 150 °C (Maximum values) Tj = 150 °C (Typical values) 1.E+00 Tj = 25 °C (Maximum values) 1.E-01 1.E-02 VFM(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy printed circuit FR4, eCU = 35 µm) Zth(j-a)/Rth(j-a) 1.0 0.9 DO-201AD Lleads=10mm 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-01 1.E+00 1.E+01 tP(s) 1.E+02 1.E+03 Figure 4: Peak reverse recovery current versus dIF/dt (typical values) 20 IRM(A) VR = 400 V 18 Tj = 125° C 16 14 12 IF = 0.5 x IF(AV) 10 8 IF = 0.25 x IF(AV) 6 4 2 0 0 50 100 150 200 IF = IF(AV) IF = 2 x IF(AV) dIF/dt(A/µs) 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values) 700 tRR(ns) 600 VR = 400 V Tj = 125 °C 500 400 300 200 IF = 2 x IF(AV) IF = IF(AV) IF = 0.5 x IF(AV) 100 0 0 20 40 dIF/dt(A/µs) 60 80 100 120 140 160 180 200 Figure 6: Reverse recovery charges versus dIF/ dt (typical values) 500 QRR(nC) VR = 400 V 450 Tj = 125 °C IF = 2 x IF(AV) 400 350 IF = IF(AV) 300 250 IF = 0.5 x IF(AV) 200 150 100 50 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 DocID8322 Rev 4 3/11 Characteristics Figure 7: Softness factor versus dIF/dt (typical values) Sfactor 2.0 1.8 IF = IF(AV) VR = 400 V Tj = 125 °C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 dIF/dt(A/µs) 0.0 0 20 40 60 80 100 120 140 160 180 200 STTH3L06 Figure 8: Relative variations of dynamic parameters versus junction temperature Figure 9: Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 10 IF = IF(AV) 9 Tj = 125 °C 8 7 6 5 4 3 2 1 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 Figure 10: Forward recovery time versus dIF/dt (typical values) 200 tfr(ns) 180 160 IF = IF(AV) VFR = 1.1 x VF max. Tj = 125 °C 140 120 100 80 60 40 20 0 0 dlF/dt(A/µs) 20 40 60 80 100 120 140 160 180 200 Figure 11: Thermal resistance junction to ambient versus copper surface under lead (epoxy FR4, eCU = 35 μm) (SMB / SMC) Rth(j-a)(C°/W) 100 90 SMB 80 70 60 SMC 50 40 30 20 10 SCu(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 12: Thermal resistance versus lead length 100 Rth(°C/W) 90 80 70 60 50 40 30.


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