Document
STTH3L06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
A
A
K
SMB
K
A K
SMC
DO-201AD
Features
Ultrafast switching Low forward voltage drop Low thermal resistance Low leakage current (platinum doping)
Description
This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections.
It is also intended for use as a freewheeling diode in power supplies and other power switching applications.
Table 1: Device summary
Symbol
Value
IF(AV) VRRM IR (max.) Tj (max.) VF (typ.) trr (typ.)
3A 600 V 100 µA 175 °C 0.85 V 60 ns
Table 2: Order codes
Part number
Marking
STTH3L06
STTH3L06
STTH3L06U
3L6U
STTH3L06S
S06
April 2016
DocID8322 Rev 4
This is information on a product in full production.
1/11
www.st.com
Characteristics
STTH3L06
1
Characteristics
Table 3: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current δ = DO-201AD/SMC TI = 100 °C
0.5, square wave
SMB
TI = 80 °C
3
A
IFSM
Surge non repetitive forward current, tp = 10 ms sinusoidal
DO-201AD SMB/SMC
70 60
A A
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
-65 to +175 °C
+175
°C
Symbol Rth(j-l) Rth(j-a)
Table 4: Thermal parameters
Parameter
DO-201AD L = 10 mm
Junction to lead
SMB
SMC
Junction to ambient
DO-201AD L = 10 mm
Maximum 20 25 20 75
Unit °C/W
Symbol IR VF
Table 5: Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Reverse leakage current Forward voltage drop
Tj = 25 °C
-
VR = VRRM
Tj = 150 °C
-
3 µA
15 100
Tj = 25 °C IF = 3 A
Tj = 150 °C
-
1.3
V
- 0.85 1.05
To evaluate the conduction losses use the following equation:
P = 0.89 x IF(AV) + 0.055 IF2(RMS)
Table 6: Dynamic characteristics
Symbol
Parameters
Test conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
Tj = 25 °C
IF = 1 A; dIF/dt = -50 A/μs; VR = 30 V
-
60 85
ns
tfr
Forward recovery time
IF = 3 A; dIF/dt = 100 A/μs; VFR = 1.1 x VFmax
-
100
Forward
Tj = 25 °C
VFP
recovery
voltage
IF = 3 A; dlF/dt = 100 A/µs -
7.5 V
2/11
DocID8322 Rev 4
STTH3L06
1.1
Characteristics (curves)
Characteristics
Figure 1: Conduction losses versus average current
P(W) 4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
δ = 0.05
δ = 0.1
δ = 0.2
IF(AV)(A)
1.0
1.5
2.0
2.5
δ = 0.5
δ=1
T
δ= tp/T
tp
3.0
3.5
4.0
Figure 2: Forward voltage drop versus forward current
1.E+02 IFM(A)
1.E+01
Tj = 150 °C (Maximum values)
Tj = 150 °C (Typical values)
1.E+00
Tj = 25 °C (Maximum values)
1.E-01
1.E-02
VFM(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy printed circuit FR4, eCU = 35 µm)
Zth(j-a)/Rth(j-a) 1.0
0.9
DO-201AD Lleads=10mm
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0 1.E-01
1.E+00
1.E+01
tP(s) 1.E+02
1.E+03
Figure 4: Peak reverse recovery current versus dIF/dt (typical values)
20 IRM(A)
VR = 400 V
18
Tj = 125° C
16
14
12
IF = 0.5 x IF(AV)
10
8
IF = 0.25 x IF(AV)
6
4
2
0 0 50 100 150 200
IF = IF(AV)
IF = 2 x IF(AV)
dIF/dt(A/µs) 250 300 350 400 450
500
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
700 tRR(ns)
600
VR = 400 V Tj = 125 °C
500 400 300 200
IF = 2 x IF(AV)
IF = IF(AV)
IF = 0.5 x IF(AV)
100
0 0
20 40
dIF/dt(A/µs) 60 80 100 120 140 160 180 200
Figure 6: Reverse recovery charges versus dIF/ dt
(typical values)
500 QRR(nC)
VR = 400 V
450 Tj = 125 °C
IF = 2 x IF(AV)
400 350
IF = IF(AV)
300 250
IF = 0.5 x IF(AV)
200
150
100
50
dIF/dt(A/µs)
0 0 20 40 60 80 100 120 140 160 180 200
DocID8322 Rev 4
3/11
Characteristics
Figure 7: Softness factor versus dIF/dt (typical
values)
Sfactor
2.0
1.8
IF = IF(AV) VR = 400 V Tj = 125 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
dIF/dt(A/µs)
0.0 0
20 40 60 80 100 120 140 160 180 200
STTH3L06
Figure 8: Relative variations of dynamic parameters versus junction temperature
Figure 9: Transient peak forward voltage versus dIF/dt (typical values)
VFP(V) 10
IF = IF(AV)
9
Tj = 125 °C
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0 0 20 40 60 80 100 120 140 160 180 200
Figure 10: Forward recovery time versus dIF/dt
(typical values)
200 tfr(ns)
180 160
IF = IF(AV) VFR = 1.1 x VF max. Tj = 125 °C
140
120
100
80
60
40
20
0 0
dlF/dt(A/µs) 20 40 60 80 100 120 140 160 180 200
Figure 11: Thermal resistance junction to ambient versus copper surface under lead
(epoxy FR4, eCU = 35 μm) (SMB / SMC)
Rth(j-a)(C°/W) 100
90
SMB
80
70
60
SMC
50
40
30
20
10
SCu(cm²)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 12: Thermal resistance versus lead length
100 Rth(°C/W)
90
80
70
60
50
40
30.