LH28F008SC

LH28F008SC FEATURES 42-PIN CSP 8M (1M × 8) Flash Memory TOP VIEW High-Density Symmetrically-Blocked Architecture – Sixteen 64K Erasable Blocks 1 A B C D E F A5 A4 A6 A3 A2 A1 2 A8 A7 A9 DQ1 A0 DQ0 3 A11 A10 RP NC DQ3 DQ2 4 VPP VCC CE VCC GND GND 5 A12 A13 A14 DQ4 DQ6 DQ5 6 A15 NC A16 DQ7 OE RY/BY 7 A17 A18 A19 NC NC WE High-Performance – 85 ns Read Access Time Enhanced Automated Suspend Options – Byte Write Suspend to Read – Block Erase Suspend to Byte Write – Block Erase Suspend to Read Enhanced Data Protection Features – Absolute Protection with VPP = GND – Flexible Block Locking – Block Erase/Byte Write Lockout during Power Transitions 28F008SC-20 Figure 1. CSP 42-Pin Configuration 40-PIN TSOP TOP VIEW Extended Cycling Capability – 100,000 Block Erase Cycles – 1.6 Million Block Erase Cycles/Chip Low Power Management – Deep Power-Down Mode – Automatic Power Saving Mode Decreases ICC in Static Mode A19 A18 A17 A16 A15 A14 A13 A12 CE VCC VPP RP A11 A10 A9 A8 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 NC NC WE OE RY/BY DQ7 DQ6 DQ5 DQ4 VCC GND GND DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3 Automated Byte Write and Block Erase – Command User Interface – Status Register SmartVoltage Technology – 3.3 V or 5 V VCC – 3.3 V, 5 V, or 12 V VPP SRAM - Compatible Write Interface ETOX™ V Nonvolatile Flash Technology Industry - Standard Packaging – 42-Pin, .67 mm × 8 mm2 CSP Package – 40...