8M (1M x 8) Flash Memory
LH28F008SC
FEATURES
42-PIN CSP
8M (1M × 8) Flash Memory
TOP VIEW
• High-Density Symmetrically-Blocked
Architecture – ...
Description
LH28F008SC
FEATURES
42-PIN CSP
8M (1M × 8) Flash Memory
TOP VIEW
High-Density Symmetrically-Blocked
Architecture – Sixteen 64K Erasable Blocks
1 A B C D E F A5 A4 A6 A3 A2 A1 2 A8 A7 A9 DQ1 A0 DQ0 3 A11 A10 RP NC DQ3 DQ2 4 VPP VCC CE VCC GND GND 5 A12 A13 A14 DQ4 DQ6 DQ5 6 A15 NC A16 DQ7 OE RY/BY 7 A17 A18 A19 NC NC WE
High-Performance
– 85 ns Read Access Time
Enhanced Automated Suspend Options
– Byte Write Suspend to Read – Block Erase Suspend to Byte Write – Block Erase Suspend to Read
Enhanced Data Protection Features
– Absolute Protection with VPP = GND – Flexible Block Locking – Block Erase/Byte Write Lockout during Power Transitions
28F008SC-20
Figure 1. CSP 42-Pin Configuration
40-PIN TSOP TOP VIEW
Extended Cycling Capability
– 100,000 Block Erase Cycles – 1.6 Million Block Erase Cycles/Chip
Low Power Management
– Deep Power-Down Mode – Automatic Power Saving Mode Decreases ICC in Static Mode
A19 A18 A17 A16 A15 A14 A13 A12 CE VCC VPP RP A11 A10 A9 A8 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
NC NC WE OE RY/BY DQ7 DQ6 DQ5 DQ4 VCC GND GND DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3
Automated Byte Write and Block Erase
– Command User Interface – Status Register
SmartVoltage Technology
– 3.3 V or 5 V VCC – 3.3 V, 5 V, or 12 V VPP
SRAM - Compatible Write Interface ETOX™ V Nonvolatile Flash Technology Industry - Standard Packaging
– 42-Pin, .67 mm × 8 mm2 CSP Package – 40...
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