Cascadable Silicon Bipolar MMIC Amplifier
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data
MSA-0285
Features
• Cascadable 50 Ω Gain Block • 3 dB Bandwid...
Description
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data
MSA-0285
Features
Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 2.6 GHz 12.0 dB Typical Gain at 1.0␣ GHz Unconditionally Stable (k>1) Low Cost Plastic Package
designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
85 Plastic Package
Description
The MSA-0285 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9563E
6-282
MSA-0285 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 325 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 95°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 10.5 mW/°C for TC > 119°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information.
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