MSA0886

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0886 Features Usable Gain to 5.5␣ GHz High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz Surface Mount Plastic Package Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” Description The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, 86 Plastic Package ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9547E 6-426 MSA-0886 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to ...