MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Trans...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency
Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
High Current–Gain — Bandwidth Product
Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
Guaranteed RF Parameters (MRF9011LT1)
Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain
Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel
MMBR901LT1, T3 MPS901 MRF901
MRF9011LT1
IC = 30 mA SURFACE MOUNTED HIGH–FREQUENCY
TRANSISTOR NPN SILICON
CASE 318–08, STYLE 6...