MPSA94

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES °§High Breakdown Voltage. °§Complementary to MPSA44. B MPSA94 EPITAXIAL PLANAR PNP TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25°… ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -400 -400 -6 -300 625 150 -55°≠150 UNIT V D H V V mA mW °… °… L F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25°… ) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut off Current Collector Cut off Current Emitter Cutoff Current SYMBOL V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO ICES IEBO TEST CONDITION IC=-100ÏA, IE=0 IC=-1mA, IB=0 IC=-100ÏA, IB=0 IE=-10ÏA, IC=0 VCB=-300V, IE=0 VCE=-400V, IB=0 VEB=-4V, IC=0 VCE=-10V, IC=-1mA DC Current Gain * hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance * * VCE(sat) VBE(sat) Cob IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA VCB=-20V, IE=0, f=1MHz MIN. -400 -400 -400 -6.0 40 50 45 40 TYP. 7 MAX. -100 -1 -100 300 -0.5 -0.75 V ...