SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage...
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
High peak current capability Improved transconductance
23 1 P-TO220-3-31
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V 0.38 Ω 11 A
PG-TO220
Type
Package
Ordering Code Marking
SPP11N60C3
PG-TO220 Q67040-S4395 11N60C3
SPI11N60C3
PG-TO262 Q67042-S4403 11N60C3
SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220
11N60C3 11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static
Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7)
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
11
111)
7
71)
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit A
A mJ
A V W °C V/ns
Rev. 3.3
Page 1
2018-02-09
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junct...