Document
SPD30N06S2L-23 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 55 23 30
P- TO252 -3-11
V mΩ A
• Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPD30N06S2L-23
Package Ordering Code P- TO252 -3-11 Q67060-S7410
Marking 2N06L23
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C,
1)
Symbol ID
Value 30 30
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
120 150 10 6 ±20 100 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=30 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=30A, VDS=40V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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SPD30N06S2L-23
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.98 max. 1.5 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=50µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 19.7 15.2 1 100 100 30 23 nA mΩ
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=22A
Drain-source on-state resistance
V GS=10V, I D=22A
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 46A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
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SPD30N06S2L-23
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =40V, ID =30A, VGS =0 to 10V VDD =40V, ID =30A
Symbol
Conditions min.
Values typ. 37 1040 240 75 11 16 21 15 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz
19 -
S
1390 pF 325 110 17 24 32 23 ns
VDD =30V, VGS =10V, ID =30A, RG =5Ω
-
3 11 31 3.8
5 16 42 -
nC
V(plateau) VDD =40V, ID =30A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =30A VR =30V, IF =lS , diF /dt=100A/µs
IS
TC=25°C
-
0.9 47 45
30 120 1.3 58 55
A
V ns nC
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1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V
110
SPD30N06S2L-23
2 Drain current ID = f (T C) parameter: VGS≥ 10 V
32
SPD30N06S2L-23
W
90 80
A
24
P tot
ID
100 120 140 160 °C 190
70 60
20
16 50 40 30 20 4 10 0 0 20 40 60 80 0 0 20 40 60 80 12
8
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10
3 SPD30N06S2L-23
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPD30N06S2L-23
K/W A
10
t = 8.6µs p 0
10
2
10 µs
Z thJC
ID
10
-1
=
V
DS
/I
D
D = 0.50
100 µs
DS (on )
10
1
R
10
-2
0.20 0.10 0.05
1 ms
10
-3
single pulse
0.02 0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
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tp
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5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
SPD30N06S2L-23
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
SPD30N06S2L-23
75
A
Ptot = 100W
V [V] GS a 3.0 b 3.2
mΩ
75
d e f g h
i
60 55 50
60
R DS(on)
h
c d e f
3.4 3.6 3.8 4.0 4.2 4.5 10.0
55 50 45 40 35 30 25
ID
45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5
a c b e d f g
g h i
20 15 10 VGS [V] = 5
d 3.6 e 3.8 f 4.0 g 4.2 h i 4.5 10.0
i
6
V
0 8 0 10 20 30 40 50
A
65
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
60
8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs
45
A
50
S
35 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 0 0 10 20 30 40 20 15 10 30 25
V 5 VGS
g fs
ID
A 55 ID
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9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 22 A, VGS = 10 V
80
SPD30N06S2L-23
10 Typ. gate threshold voltage VGS(th) = f (T j) para.