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SPD30N06S2L-23 Dataheets PDF



Part Number SPD30N06S2L-23
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPD30N06S2L-23 DatasheetSPD30N06S2L-23 Datasheet (PDF)

SPD30N06S2L-23 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 23 30 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N06S2L-23 Package Ordering Code P- TO252 -3-11 Q67060-S7410 Marking 2N06L23 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C, 1) Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/.

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SPD30N06S2L-23 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 23 30 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N06S2L-23 Package Ordering Code P- TO252 -3-11 Q67060-S7410 Marking 2N06L23 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C, 1) Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 150 10 6 ±20 100 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=40V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD30N06S2L-23 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.98 max. 1.5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=50µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 19.7 15.2 1 100 100 30 23 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=22A Drain-source on-state resistance V GS=10V, I D=22A 1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 46A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD30N06S2L-23 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =40V, ID =30A, VGS =0 to 10V VDD =40V, ID =30A Symbol Conditions min. Values typ. 37 1040 240 75 11 16 21 15 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 19 - S 1390 pF 325 110 17 24 32 23 ns VDD =30V, VGS =10V, ID =30A, RG =5Ω - 3 11 31 3.8 5 16 42 - nC V(plateau) VDD =40V, ID =30A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =30A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 47 45 30 120 1.3 58 55 A V ns nC Page 3 2003-05-09 SPD30N06S2L-23 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 110 SPD30N06S2L-23 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 32 SPD30N06S2L-23 W 90 80 A 24 P tot ID 100 120 140 160 °C 190 70 60 20 16 50 40 30 20 4 10 0 0 20 40 60 80 0 0 20 40 60 80 12 8 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD30N06S2L-23 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD30N06S2L-23 K/W A 10 t = 8.6µs p 0 10 2 10 µs Z thJC ID 10 -1 = V DS /I D D = 0.50 100 µs DS (on ) 10 1 R 10 -2 0.20 0.10 0.05 1 ms 10 -3 single pulse 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPD30N06S2L-23 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPD30N06S2L-23 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS SPD30N06S2L-23 75 A Ptot = 100W V [V] GS a 3.0 b 3.2 mΩ 75 d e f g h i 60 55 50 60 R DS(on) h c d e f 3.4 3.6 3.8 4.0 4.2 4.5 10.0 55 50 45 40 35 30 25 ID 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 a c b e d f g g h i 20 15 10 VGS [V] = 5 d 3.6 e 3.8 f 4.0 g 4.2 h i 4.5 10.0 i 6 V 0 8 0 10 20 30 40 50 A 65 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 60 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 45 A 50 S 35 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 0 0 10 20 30 40 20 15 10 30 25 V 5 VGS g fs ID A 55 ID Page 5 2003-05-09 SPD30N06S2L-23 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 22 A, VGS = 10 V 80 SPD30N06S2L-23 10 Typ. gate threshold voltage VGS(th) = f (T j) para.


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