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SPD30N03S2L-10

Infineon Technologies

Power-Transistor


Description
OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratin...



Infineon Technologies

SPD30N03S2L-10

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