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SPD26N06S2L-35

Infineon Technologies
Part Number SPD26N06S2L-35
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPD26N06S2L-35 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 35 30 P- TO252 -3-11 V...
Datasheet PDF File SPD26N06S2L-35 PDF File

SPD26N06S2L-35
SPD26N06S2L-35

Overview
SPD26N06S2L-35 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 35 30 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD26N06S2L-35 Package Ordering Code P- TO252 -3-11 Q67060-S7426 Marking 2N06L35 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Symbol ID Value 30 22 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 80 5 6 ±20 68 -55.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=26A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d ...


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