SPD04N80C3
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High...
SPD04N80C3
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
Fully qualified according to JEDEC for Industrial Applications
800 V 1.3 ! 23 nC
Pb-free lead plating; RoHS compliant; Halogen free mold compound
Ultra low gate charge
PG-TO252-3
Ultra low effective capacitances
CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward )
Type SPD04N80C3
Package PG-TO252-3
Marking 04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
I D=0.8 A, V DD=50 V I D=4 A, V DD=50 V
V DS=0…640 V
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
aswd
Value 4 2.5 12
170 0.1 4 50 ±20 ±30 63 -55 ... 150
Unit A
mJ
A V/ns V
W °C
Rev. 2.94
page 1
2020-05-10
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
SPD04N80C3
Value 4 12 4
...
