SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on)...
SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 3.9 80
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level Excellent Gate Charge x R DS(on) product (FOM)
Superior thermal resistance
175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67042-S4113 Q67042-S4112 Q67042-S4114
Marking 2N03L04 2N03L04 2N03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 380 18 6 ±20 188 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.51 max. 0.8 62 62 40
Unit
K/W
Electrical Characte...