SPB11N60C3

Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V Ω A Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum Ratings Parameter Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4395 Q67040-S4396 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 11N60C3 P-TO220-3-31 Q67040-S4408 Symbol ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 33 340 0.6 11 ±20 ±30 125 Value SPP_B SPP_B_I SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C A V A mJ Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-07-01 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resi...