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SPA11N60C3 Dataheets PDF



Part Number SPA11N60C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet SPA11N60C3 DatasheetSPA11N60C3 Datasheet (PDF)

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.38 Ω 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S439.

  SPA11N60C3   SPA11N60C3



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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.38 Ω 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 11 111) 7 71) 33 33 340 340 0.6 0.6 11 11 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.3 Page 1 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Symbol dv/dt Value 50 Unit V/ns Symbol RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold Values Unit min. typ. max. - - 1 K/W - - 3.8 - - 62 - - 80 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - Drain-Source avalanche V(BR)DS VGS=0V, ID=11A - 700 breakdown voltage -V - Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=500µA, VGS=VDS 2.1 VDS=600V, VGS=0V, Tj=25°C - Tj=150°C - 3 3.9 µA 0.1 1 - 100 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) VGS=30V, VDS=0V VGS=10V, ID=7A Tj=25°C Tj=150°C - - 100 nA Ω - 0.34 0.38 - 0.92 - Gate input resistance RG f=1MHz, open drain - 0.86 - Rev. 3.3 Page 2 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Symbol Conditions Transconductance gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance,5) Co(er) energy related Effective output capacitance,6) Co(tr) time relate.


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