CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren...
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPA02N80C3
800 V 2.7 Ω 12 nC
Type SPA02N80C3
Package PG-TO220-3
Marking 02N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2) Pulsed drain current3)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4) AR
Avalanche
current,
repetitive
t
3),4) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
I D=1 A, V DD=50 V I D=2 A, V DD=50 V
V DS=0…640 V
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Rev. 2.92
Page 1
Value 2 1.2 6 90
0.05 2 50
±20 ±30 30.5 -55 ... 150 50
Unit A
mJ
A V/ns V
W °C Ncm 2018-02-16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current3) Reverse diode dv /dt 5)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
SPA02N8...
