SP8M7
Transistors
Switching
SP8M7
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surfac...
SP8M7
Transistors
Switching
SP8M7
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3 3.9±0.15
1.5±0.1 0.15
1.27
0.4±0.1 0.1 Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current
∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD.
zEquivalent circuit
Unit V V A A A A W °C °C
(8) (7) (6) (5) (8) (7) (6) (5)
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits Nchannel Pchannel 30 −30 ±20 ±20 ±5.0 ±7.0 ±20 ±28 1.6 −1.6 6.4 −28 2 2 150 150 −55 to +150 −55 to +150
∗1 ∗1 ∗2
∗2
Max.1.75
∗2
0.5±0.1
(1) (4)
0.2±0.1
(1) (2) (3) (4)
(1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-A)
Limits 62.5
Unit...