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SP8M7

Rohm

Switching

SP8M7 Transistors Switching SP8M7 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surfac...


Rohm

SP8M7

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Description
SP8M7 Transistors Switching SP8M7 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) SOP8 (8) 5.0±0.2 (5) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 1.27 0.4±0.1 0.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. zEquivalent circuit Unit V V A A A A W °C °C (8) (7) (6) (5) (8) (7) (6) (5) Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Nchannel Pchannel 30 −30 ±20 ±20 ±5.0 ±7.0 ±20 ±28 1.6 −1.6 6.4 −28 2 2 150 150 −55 to +150 −55 to +150 ∗1 ∗1 ∗2 ∗2 Max.1.75 ∗2 0.5±0.1 (1) (4) 0.2±0.1 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-A) Limits 62.5 Unit...




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