MS1505

MS1505 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features 160 MHz 13.6 VOLTS POUT = 30 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Value 36 18 36 4.0 8.0 70 +200 -65 to +150 Unit V V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.2 °C/W 053-7086 Rev - 10-2002 MS1505 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVCES BVCEO BVEBO ICBO hFE IC = 15mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V STATIC Test Conditions Min. VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 250mA 36 18 4.0 --20 Value Typ. ----------- Max. ------5 200 Unit V V V mA --- DYNAMIC Symbol POUT GP COB f = 160MHz f = 160MHz f = 1MHz Test Conditions Min. PIN = 3.0W PIN = 3.0W VCB = 15V VCE = 13.6V VCE = 13.6V 30 10 --- Value Typ. ------- Max. ----110 Unit W dB pf IMPEDANCE DATA FREQ 160 MHz PIN = 3.0 W VCE = 12.5V ZIN(Ω) 1.0 +j0.4 ZCL(Ω) 2.3 + j0.1 053-7086 Rev - 10-2002 MS1505 PACKAGE MECHANICAL DATA 053-7086 Rev - 10-2002 ...