DFC15T

Ordering number:EN2375 DFC15T Diffused Junction Type Silicon Diode 1.5A Power Rectifier Features · High-speed switching use. · Plastic molded structure. · Reverse recovery time trr=0.15µs max (B, C, E, G). trr=0.3µs max (J, L, N, R). · Peak reverse voltage:VRM=100 to 1500V · Average Rectified current IO=1.5A Package Dimensions unit:mm 1173 [DFC15T] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Symbol VRM IO IFSM Tj Tstg Conditions Conditions DFC15TB 100 → → → → DFC15TJ 800 → → → → DFC15TC 200 → → → → DFC15TL 1000 → → → → DFC15TE 400 → → → C:Cathode A:Anode DFC15TG 600 1.5 80 150 Unit V A A Ta=35˚C 50Hz sine wave, 1cycle ˚C ˚C Unit V A A → –40 to +150 DFC15TN 1200 → → → DFC15TR 1500 1.5 45 125 Ta=25˚C 50Hz sine wave, 1cycle ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Current Reverse Recovery Time Symbol VF IR trr IF=1.5A (B, C, E, G) IF=1.5A (J, L, N, R) VR:At each VRM IF=2mA, VR=15V (B,C, E, G) IF=2mA, VR=15V (J, L, N, R) Conditions Ratings min typ max 1.2 1.5 –10 0.15 0.3 Unit V V µA µs µs Reverse Recovery Time Test Circuit Unit (resistance:Ω, capacitance:F) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo ...