DFB20T

Ordering number:EN2406 DFB20T Diffused Junction Type Silicon Diode 2.0A Power Rectifier Features · High-speed switching use. · Reverse recovery time trr=0.15µs max (B, C, E, G). trr=0.3µs max (J, L). · Peak reverse voltage:VRM=100 to 1000V · Average Rectified current IO=2.0A Package Dimensions unit:mm 1177 [DFB20T] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Symbol VRM IO IFSM Tj Tstg Conditions Conditions DFB20TB 100 → → → → DFB20TJ 800 → → → DFB20TC 200 → → → → DFB20TL 1000 2.0 70 125 DFB20TE 400 → → → C:Cathode A:Anode DFB20TG 600 2.0 120 150 Unit V A A Ta=40˚C 50Hz sine wave, 1 cycle ˚C ˚C Unit V A A → –40 to +150 Ta=40˚C 50Hz sine wave, 1 cycle ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Current Reverse Recovery Time Symbol VF IR trr IF=2.0A (B, C, E, G) IF=2.0A (J, L) VR:At each VRM IF=2mA, VR=15V (B,C, E, G) IF=2mA, VR=15V (J, L) Conditions Ratings min typ max 1.2 1.5 10 0.15 0.3 Unit V V µA µs µs Reverse Recovery Time Test Circuit Unit (resistance:Ω, capacitance:F) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/5138TA, TS No.2...