BC212L
BC212L
B C E
TO-92
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applic...
BC212L
BC212L
B C E
TO-92
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Value 50 60 5 300 -55 to +150
Units V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol PD RθJC RθJA Total Device Dissipation Derate above 25°C
TA = 25°C unless otherwise noted
Characteristic
Max 625 5.0 83.3 200
Units mW mW/°C °C/W °C/W
Rev. A 7/24/00
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
© 2000 Fairchild Semiconductor International
BC212L
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = ...