BC182B

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC182/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC182,A,B BC183 BC184 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 182 50 60 BC 183 30 45 6.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO — — — — 0.2 0.2 0.2 — 15 15 15 15 nA 60 45 45 6.0 — — — — — — — — V nA 50 30 30 — — — — — — V V Collector – Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) Emitter–Base Leakage Current (VEB = 4.0 V, IC = 0) Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc....