BC182
BC182
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at collec...
BC182
BC182
NPN General Purpose Amplifier
This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 ~ 150 Units V V V mA °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
www.DataSheet4U.com
Parameter
Test Condition IC = 2mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, VBE = 0 VEB = 4V, IE = 0 VCE = 5V, IC = 10µA VCE = 5V, IC = mA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA, f = 100MHz VCE = 10V, IC = 0, f = 1MHz VCE = 5V, IC = 2mA, f = 1KHz VCE = 5V, IC = 0.2mA RS = 2KΩ, f = 1KHz
Min. 50 60 6
Typ.
Max.
Units V V V
Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current
15 15 40 120 80
nA nA
On Characteristics hFE DC Current Gain
500 0.25 0.6 1.2 V V V MHz 5 pF dB 500 10
VCE(sat) VBE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
0.55 150 125
0.7
Dynamic Characteristics fT Cur...