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BC141 Dataheets PDF



Part Number BC141
Manufacturers Philipss
Logo Philipss
Description NPN medium power transistors
Datasheet BC141 DatasheetBC141 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC14.

  BC141   BC141


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DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC140; BC141 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC140 BC141 VCEO collector-emitter voltage BC140 BC141 ICM Ptot hFE peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-16; BC141-16 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz Tcase ≤ 45 °C IC = 100 mA; VCE = 1 V 63 100 50 100 160 − 160 250 − MHz open base − − − − − − − − 40 60 1.5 3.7 V V A W CONDITIONS open emitter − − − − 80 100 V V MIN. TYP. MAX. UNIT 1997 May 12 2 Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC140 BC141 VCEO collector-emitter voltage BC140 BC141 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tcase ≤ 45 °C open collector open base − − − − − − − PARAMETER collector-base voltage CONDITIONS open emitter − − BC140; BC141 MIN. MAX. 80 100 40 60 7 1 1.5 200 3.7 +150 175 +150 UNIT V V V V V A A mA W °C °C °C −65 − −65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 200 35 UNIT K/W K/W 1997 May 12 3 Philips Semiconductors Product specification NPN medium power transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC140-10; BC141-10 BC140-16; BC141-16 hFE DC current gain BC140-10; BC141-10 BC140-16; BC141-16 hFE DC current gain BC140-10; BC141-10 BC140-16; BC141-16 VCEsat VBE Cc Ce fT ton toff collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency IC = 1 A; IB = 100 mA IC = 1 A; VCE = 1 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA IC = 1 A; VCE = 1 V − − − − − − 50 − − IC = 100 mA; VCE = 1 V 63 100 CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 100 µA; VCE = 1 V − − BC140; BC141 MIN. − − − TYP. 10 10 − 40 90 100 160 20 30 0.6 1.2 − − − − − MAX. UNIT 100 100 100 − − 160 250 − − 1 1.8 25 80 − V V pF pF MHz nA µA nA Switching times (between 10% and 90% levels) turn-on time turn-off time 250 850 ns ns 1997 May 12 4 Philips Semiconductors Product specification NPN medium power transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BC140; BC141 SOT5/11 j B α seating plane w M A M B M 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 May 12 5 Philips Semiconductors Product specification NPN medium power transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BC140; BC141 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at t.


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